ESD5305FB will semiconductor ltd. 1 revision 1.1 , 2014 / 1 2 / 19 ESD5305FB 4 - line s , un i - d irectional, l ow c apacitance trans ient voltage suppressors descriptions the ESD5305FB is a low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designe d to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) . the ESD5305FB incorporates four pairs of low capacitance steering diodes plus a tvs diode. the esd5 305fb may be used to provide esd protection up to 30k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 6a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD5305FB is available in sot 23- 6l package. standard products are pb - free and halogen - free. features ? reverse s tand - off voltage: 5 v m ax . ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 30k v ( contact discharge ) iec61000 - 4 - 5 (surge): 6a (8/20 s) ? l ow capacitance: c i/o - gnd = 0.65 pf typ. (v dd = floated) c i/o - gnd = 0.35 pf typ. (vdd = 5v) ? ultra - low leakage current: i r < 1na typ. ? l ow clamping voltage : v cl = 1 2. 8 v @ i pp = 16a (tlp) ? solid - state silico n technology applications ? usb 2.0 ? hdmi 1.3 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics ? notebooks h ttp //: www. sh - willsemi.com sot 23- 6l circuit d iagram 5305 = device code yy = year code ww = week code marking & pin configuration (top view) order i nformation device package shipping ESD5305FB - 6 /t r sot 23- 6l 3 000/tape&reel 1 3 4 6 2 5 6 4 5 3 1 2 i/o i/o vdd i/o i/o gnd 5305 yyww
ESD5305FB will semiconductor ltd. 2 revision 1.1 , 2014 / 1 2 / 19 absolute m aximum r ating s electrical characteristics ( t a = 25 o c , unless otherwise noted ) definiti ons of electrical characteristics parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 84 w peak pulse current (t p = 8/20 s) i pp 6 a esd according to iec61000 - 4 - 2 air discharge v esd 30 k v esd according to iec61000 - 4 - 2 co ntact discharge 30 j unction temperature t j 125 o c operation temperature t op - 40 to 85 o c storage temperature t stg - 55 to 150 o c lead temperature t l 260 o c i v v f v rwm v br v fc i pp i f i r i br v cl i pp v f forward voltage i f forward current v fc forward clamping voltage i pp peak pulse current v rwm reverse stand-off voltage i r reverse leakage current v br reverse breakdown voltage v cl clamping voltage i pp peak pulse current
ESD5305FB will semiconductor ltd. 3 revision 1.1 , 2014 / 1 2 / 19 electrical characteristics ( t a = 25 o c , unless otherwise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 10a to 30a. 2) non - repetitive current pulse, according to iec61000-4 -5. parameter symbol condition min. typ. max. unit reverse stand - off voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v < 1 5 0 n a rever se breakdow n voltage v br i br = 1ma 7.0 8. 0 9.0 v forward voltage v f i f = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 12. 8 v dynamic resistance 1) r dyn 0. 24 2 ) v cl i pp = 1a, t p = 8/20s = 8/20s
ESD5305FB will semiconductor ltd. 4 revision 1.1 , 2014 / 1 2 / 19 typical characteristics ( t a = 25 o c , unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 0 1 2 3 4 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i/o to i/o vcc = floated, i/o to gnd vdd = 5v, i/o to gnd f = 1mhz junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 pulse waveform: t p = 8/20
ESD5305FB will semiconductor ltd. 5 revision 1.1 , 2014 / 1 2 / 19 typical characteristics ( t a = 25 o c , unless otherwise noted ) esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESD5305FB will semiconductor ltd. 6 revision 1.1 , 2014 / 1 2 / 19 package outline dimensions sot23 - 6l recommended l and p attern (unit: mm) symbol dimensions in millimeters min. typ. max. a -- -- 1.25 0 a1 0.000 -- 0.1 50 a2 1.0 00 1.100 1.200 a3 0.600 0.650 0.700 b 0.360 -- 0.500 b1 0.360 0.380 0. 450 c 0.140 -- 0.200 c1 0.140 0.150 0.160 d 2.826 2.926 3.026 e 2.600 2.800 3.000 e1 1.526 1.626 1.726 e 0.900 0.950 1.000 e 1 1.800 1.900 2.000 l 0.350 0.450 0.600 l1 0.590ref l2 0.250bsc r 0.100 -- -- r1 0.100 -- 0.200 0 o -- 8 o 1 3 o 5 o 7 o 2 6 o -- 14 o 1 . 10 0.95 3.60 1.40 2.50 0.60 note s : t his recommended land pattern is for reference pu rposes only. please consult your manufacturing group to ensure your pcb design guidelines are met.
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